Nanjing Crylink Photonics Co.,Ltd

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V3+ Y3Al5O12 V YAG Q Switch Crystals High Ground State Absorption Cross Section

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Nanjing Crylink Photonics Co.,Ltd
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Mrsales
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V3+ Y3Al5O12 V YAG Q Switch Crystals High Ground State Absorption Cross Section

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Place of Origin :China
Brand Name :CRYLINK
Certification :Iso9001
MOQ :1 Pieces
Price :negotiation
Packaging Details :Carton
Delivery Time :3-4 weeks
Payment Terms :TT
Supply Ability :100 pieces /month
Model Number :CRYLINK-V YAG Q-Switch Crystal
Chemical formula :V3+:Y3Al5O12
Crystal structure :cubic - la3d
Orientation :<100> <+/-0.5°
Transmittance :30%-97%
Opticaldensity :0.1-0.8
Recovery time :5~2210-22s
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Description

V:YAG (Yttrium-Aluminum Garnet doped with three-valence vanadium V3+) is a relatively new crystal material of saturable absorbers and passive Q-switch in the spectral range from 1064 to 1440 nm, primarily because of extremely high ground-state absorption cross section and negligible excited-state absorption around the absorption peak at about 1300 nm. This material, revealing excellent optical, mechanical, and thermal properties, can typically be grown by the Czochralski method. V:YAG crystals have been applied for a variety of active media such as Nd:YAG, Nd:YAP, Nd:KGW, Nd:YVO4 to achieve compact and good-performance passive Q-switching lasers.

Features

Extremely high ground state absorption

Negligible excited state absorption

High contrast of Q-switch

Good optical, mechanical, and thermal properties

UV resistant and high High damage threshold(>500MW/cm2)

Applications

Q-switching and model-locking for Nd:YAG lasers

Q-switching and model-locking for Nd:YAP lasers

Q-switching and model-locking for Nd:KGW lasers

Q-switching and model-locking for Nd:YVO4 lasers

Parameters

Property

Value

Chemical formula

V3+:Y3Al5O12

Crystal structure

cubic - la3d

Orientation

<100> <+/-0.5°

Transmittance

30%-97%

Opticaldensity

0.1-0.8

Specifications

Property

Value

Atomic transition structure

Two-levelsystem

Recovery time

5~2210-22s

Concentrations

(0.05~0.35)wt%

Absorptioncross-section

7.3×10-18cm2 (@ 1340 nm)

Emissionbandwidth

1000-1450 nm

Centralabsorption wavelength

1300nm

Coatings

Standardcoating is AR with R < 0.2% (@1340 nm)

Polishing Specification

Property

Value

OrientationTolerence

<0.5°

Thickness/DiameterTolerance

±0.05mm

SurfaceFlatness

</8@632nm

WavefrontDistortion

</4@632nm

SurfaceQuality

10/5

Parallel

30

Perpendicular

15

ClearAperture

>90%

Chamfer

<0.2×45°

Standard products

Initial transmission @1064nm

Dimensionsmm

Coatings

SurfaceFlatness

SurfaceQuality (scratch/dig)

T0=30%

dia 5

AR≤0.2% @1064nm

</8@632 nm

10/5

3x3

5x5

T0=40%

dia 5

3x3

5x5

T0=50%

dia 5

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